Tech Radar
Samsung plans record-breaking 400-layer NAND chip that may very well be key to breaking 200TB barrier for extremely giant capability AI hyperscaler SSDs
Nov
- Samsung to launch 400-layer NAND chip for AI information facilities
- New BV NAND tech boosts density and minimizes warmth buildup
- Plans for 1,000-layer NAND by 2030 to develop capability
Samsung is working to launch a record-breaking 400-layer vertical NAND flash chip by 2026, studies have claimed.
A report by the Korea Economic Daily says Samsung’s System Options (DS) division goals to advance the NAND flash market with its cutting-edge V10 NAND, designed to satisfy surging demand in AI information facilities.
The corporate’s reminiscence roadmap, as outlined within the report, exhibits plans for a sophisticated Tenth-generation NAND that may make the most of bonding expertise to individually construct reminiscence cells and the peripheral circuitry on completely different wafers, later fusing them right into a single chip. Often known as bonding vertical NANDFlash (BV NAND), this new method minimizes warmth buildup and maximizes each capability and efficiency, creating what Samsung has described as a “dream NAND for AI.”
1,000 layers by 2030
The BV NAND design, boasting a 1.6x enhance in bit density per unit space, helps ultra-high-capacity solid-state drives (SSDs) ideally suited for AI functions.
Samsung’s present 286-layer V9 NAND chips marked a big milestone, however the 400-layer V10 is predicted to redefine capability limits, doubtlessly breaking the 200TB storage threshold for ultra-large AI hyperscaler SSDs, whereas enhancing vitality effectivity.
For future releases, world’s largest reminiscence chipmaker plans to introduce Eleventh-generation V11 NAND in 2027 with a 50% sooner information switch pace, additional optimizing efficiency for high-demand information storage wants.
Samsung’s formidable NAND roadmap extends even additional, with plans for chips exceeding 1,000 layers by 2030, KED studies. This development goals to maintain Samsung on the forefront of the high-capacity NAND market, the place demand is spurred by AI functions that require expansive storage options to course of huge volumes of information.
Within the DRAM sector, Samsung goals to launch sixth-generation 1c DRAM and seventh-generation 1d DRAM by the top of 2024, focusing on use in high-performance AI chips. In response to the Korea Financial Every day report, the corporate additionally has plans for sub-10 nm 0a DRAM by 2027, utilizing a vertical channel transistor construction for larger stability and effectivity.
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